inchange semiconductor isc website www.iscsemi.com isc & iscsemi is registered trademark 1 schottky barrier rectifier MBR60200PT features plastic material used carriers unerwriter laboratory metal silicon rectifier, majonty carrier conduction low power loss,high efficiency guard ring for transient protection high surge capability,high current capability 1 00% avalanche tested minimum lot-to-lot variations for robust device performance and reliable operation applications for use in low voltage ,high frequency inverters,free wheeling and polarity protection applications. absolute maximum ratings(ta=25 ) symbol parameter value unit v rrm v rwm v r peak repetitive reverse voltage working peak reverse voltage dc blocking voltage 200 v v r(rms) rms reverse voltag 140 v i f(av) average rectified forward current 60 a i fsm nonrepetitive peak surge current 8.3ms single half sine-wave superimposed on rated load conditions 400 a i rrm peak repetitive reverse surge current (20 s, 1.0khz) 1.0 a t j junction temperature -55~150 t stg storage temperature range -65~175 dv/dt voltage rate of change (rated v r ) 1,000 v/ s
, 1 & + $ 1 * ( 6 h p l f r q g x f w r u l v f z h e v l w h ? z z z l v f v h p l f r p l v f l v f v h p l l v u h j l v w h u h g w u d g h p d u n 6 f k r w w n \ % d u u l h u 5 h f w l i l h u 0 % 5 3 7 7 + ( 5 0 $ / & + $ 5 $ & 7 ( 5 , 6 7 , & 6 6 < 0 % 2 / 3 $ 5 $ 0 ( 7 ( 5 0 $ ; 8 1 , 7 5 w k m f 7 k h u p d o 5 h v l v w d q f h - x q f w l r q w r & d v h : ( / ( & 7 5 , & $ / & + $ 5 $ & 7 ( 5 , 6 7 , & 6 3 x o v h 7 h v w 3 x o v h : l g w k - v ' x w \ & \ f o h 0 6 < 0 % 2 / 3 $ 5 $ 0 ( 7 ( 5 & 2 1 ' , 7 , 2 1 6 0 $ ; 8 1 , 7 9 ) 0 d [ l p x p , q v w d q w d q h r x v ) r u z d u g 9 r o w d j h , ) $ 7 f 9 , 5 0 d [ l p x p , q v w d q w d q h r x v 5 h y h u v h & x u u h q w 9 5 9 5 : 0 7 f p $ 9 5 9 5 : 0 7 f
|
